GaAs Monolithic Integrated Switch O1003

GaAs Monolithic Integrated Switch O1003

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O1003 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 11 ~ 17GHz. The switching chip can provide less than 1.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

Additional information

Min. Frequency (GHz)

11

Max. Frequency (GHz)

17

Isolation (dB)

Insertion Loss (dB)

Input P-0.1 (dB)

Return Loss RFC(ON)

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