100V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS140N10C is a high-performance 100V N-Channel MOSFET utilizing advanced split gate trench technology. It is characterized by excellent on-resistance (RDS(ON)) and low gate charge, and is 100% UIS and °”Vds tested. This device is ideally suited for power management, PWM applications, and load switching.
OGS140N10C |
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100V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
100 |
|
BVdss (V) |
100 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
0 |
|
IF (A) |
15 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
VRRM (V) |
100 |
|
TJ ( degC) |
-55 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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