100V N-Channel Split Gate MOSFET
$0
Super Low Gate Charge
100% EAS Guaranteed
RoHS compliant
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification
- Description
- Reviews (0)
Description
The OGS140N10S is an advanced 100V N-Channel Split Gate MOSFET designed with high cell density Trench technology. It features super low gate charge, 100% EAS guaranteed, and full RoHS compliance. This power MOSFET is specifically optimized for high-frequency switching, synchronous rectification, and DC/DC converter applications, providing excellent CdV/dt effect decline for enhanced reliability.
OGS140N10S |
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100V N-Channel Split Gate MOSFET |
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Property |
Value |
|
Vrrm (V) |
100 |
|
BVdss (V) |
100 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
2 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
10 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
|
Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
VRRM (V) |
100 |
|
TJ ( degC) |
25 |
Features |
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Super Low Gate Charge |
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100% EAS Guaranteed |
|
|
RoHS compliant |
|
|
Green Device Available |
|
|
Excellent CdV/dt effect decline |
|
|
Advanced high cell density Trench technology |
|
|
DC/DC Converter application |
|
|
Ideal for high-frequency switching and synchronous rectification |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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