100V N-Channel Split Gate MOSFET
Super Low Gate Charge
100% EAS Guaranteed
RoHS compliant
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification
- Description
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Description
The OGS140N10S is an advanced 100V N-Channel Split Gate MOSFET designed with high cell density Trench technology. It features super low gate charge, 100% EAS guaranteed, and full RoHS compliance. This power MOSFET is specifically optimized for high-frequency switching, synchronous rectification, and DC/DC converter applications, providing excellent CdV/dt effect decline for enhanced reliability.
OGS140N10S | |
| 100V N-Channel Split Gate MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 2 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 10 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Super Low Gate Charge | |
| 100% EAS Guaranteed | |
| RoHS compliant | |
| Green Device Available | |
| Excellent CdV/dt effect decline | |
| Advanced high cell density Trench technology | |
| DC/DC Converter application | |
| Ideal for high-frequency switching and synchronous rectification | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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