30V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
VDSS=30V,ID=20A
RDS(on) : 0.016mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS20N03 is a 30V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. It is 100% avalanche tested and offers an unrivalled gate charge of 17.5nC typical, making it suitable for various power management applications. It is available in TO-252 and PDFN3.3×3.3-8L packages.
OTS20N03 |
|
|
30V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
30 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.016 |
|
Qg (nC) |
17.5 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
15 PF |
|
Coss Typ (pF) |
15 PF |
|
Crss Typ (pF) |
15 PF |
|
Pd (W) |
35 |
|
VRRM (V) |
30 |
|
TJ ( degC) |
25 |
Features |
|
|
Low Intrinsic Capacitances. |
|
|
Excellent Switching Characteristics. |
|
|
Extended Safe Operating Area. |
|
|
Unrivalled Gate Charge :Qg= 17.5nC (Typ.). |
|
|
VDSS=30V,ID=20A |
|
|
RDS(on) : 0.016mOhm (Max) @VG=10V |
|
|
100% Avalanche Tested |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.