30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
VDSS=30V,ID=20A
RDS(on) : 0.016mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS20N03 is a 30V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. It is 100% avalanche tested and offers an unrivalled gate charge of 17.5nC typical, making it suitable for various power management applications. It is available in TO-252 and PDFN3.3×3.3-8L packages.
OTS20N03 | |
| 30V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.016 |
| Qg (nC) | 17.5 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 15 PF |
| Coss Typ (pF) | 15 PF |
| Crss Typ (pF) | 15 PF |
| Pd (W) | 35 |
| VRRM (V) | 30 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 17.5nC (Typ.). | |
| VDSS=30V,ID=20A | |
| RDS(on) : 0.016mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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