500V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=5nC (Typ.).
BVDSS=500V,ID=1A
RDS(on) : 30 mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OCS1N50T is a 500V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. This device is 100% avalanche tested and offers an unrivalled gate charge of 5nC (Typ.), making it suitable for high-efficiency power management and switching applications in a SOT-89 package.
OCS1N50T | |
| 500V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 500 |
| BVdss (V) | 500 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 30 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 5 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 150 |
| Coss Typ (pF) | 60 |
| Crss Typ (pF) | 4 |
| Pd (W) | 25 |
| VRRM (V) | 500 |
| TJ ( degC) | 400 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg=5nC (Typ.). | |
| BVDSS=500V,ID=1A | |
| RDS(on) : 30 mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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