500V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=5nC (Typ.).
BVDSS=500V,ID=1A
RDS(on) : 30 mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OCS1N50T is a 500V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. This device is 100% avalanche tested and offers an unrivalled gate charge of 5nC (Typ.), making it suitable for high-efficiency power management and switching applications in a SOT-89 package.
OCS1N50T |
|
|
500V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
500 |
|
BVdss (V) |
500 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
30 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
5 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
150 |
|
Coss Typ (pF) |
60 |
|
Crss Typ (pF) |
4 |
|
Pd (W) |
25 |
|
VRRM (V) |
500 |
|
TJ ( degC) |
400 |
Features |
|
|
Low Intrinsic Capacitances. |
|
|
Excellent Switching Characteristics. |
|
|
Extended Safe Operating Area. |
|
|
Unrivalled Gate Charge :Qg=5nC (Typ.). |
|
|
BVDSS=500V,ID=1A |
|
|
RDS(on) : 30 mOhm (Max) @VG=10V |
|
|
100% Avalanche Tested |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.