650V N-Channel MOSFET
$0
650V, 25A
RDS(ON) = 180 mmOhm @ VGS = 10V
It has been designed tOlow on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance
- Description
- Reviews (0)
Description
The OCS65R180DM is a high-voltage N-channel MOSFET with a 650V drain-source voltage and 25A continuous drain current rating. It is optimized for low on-state resistance and high-frequency switching, featuring a fast reverse recovery body diode and ultra-low on-resistance. This device is commonly used in SMPS, power adapters, LED lighting, and TV power supply units.
OCS65R180DM |
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650V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
650 |
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Grade |
MOSFET |
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Package |
ABS |
|
RDS(ON) (mOhm) |
180 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
400 |
|
IF (A) |
400 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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VRRM (V) |
650 |
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TJ ( degC) |
25 |
Features |
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650V, 25A |
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RDS(ON) = 180 mmOhm @ VGS = 10V |
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|
It has been designed tOlow on-state resistance and high frequency |
|
|
Fast reverse recovery body diode |
|
|
Low RDS(ON) |
|
|
Ultra-low on-resistance |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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