650V N-Channel MOSFET
650V, 25A
RDS(ON) = 180 mmOhm @ VGS = 10V
It has been designed tOlow on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance
- Description
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Description
The OCS65R180DM is a high-voltage N-channel MOSFET with a 650V drain-source voltage and 25A continuous drain current rating. It is optimized for low on-state resistance and high-frequency switching, featuring a fast reverse recovery body diode and ultra-low on-resistance. This device is commonly used in SMPS, power adapters, LED lighting, and TV power supply units.
OCS65R180DM | |
| 650V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 180 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 400 |
| IF (A) | 400 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 650 |
| TJ ( degC) | 25 |
Features | |
| 650V, 25A | |
| RDS(ON) = 180 mmOhm @ VGS = 10V | |
| It has been designed tOlow on-state resistance and high frequency | |
| Fast reverse recovery body diode | |
| Low RDS(ON) | |
| Ultra-low on-resistance | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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