O650V N-Channel MOSFET
650V 8A
RDS(ON) Typ = 500mmOhm @ VGS = 10V
Low FOM RDS(ON) × QG
Extremely low losses due tOvery low Eon and Eoff
Qualified for industrial grade applications according tOJEDEC
Excellent stability and uniformity
- Description
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Description
The OCS65R600RM is a high-performance 650V N-Channel MOSFET designed for industrial-grade applications. It features extremely low switching losses (low Eon and Eoff), excellent stability, and uniformity, making it ideal for power-sensitive designs like SMPS, LED lighting, and EV chargers. With a typical on-resistance of 500mmOhm and a 8A continuous drain current, it provides an optimized Figure of Merit (FOM).
OCS65R600RM | |
| O650V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 500 |
| Qg (nC) | 400 |
| IF (A) | 400 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| Rds(on) Typ (Ohm) | 500 |
| VRRM (V) | 650 |
| TJ ( degC) | 25 |
Features | |
| 650V 8A | |
| RDS(ON) Typ = 500mmOhm @ VGS = 10V | |
| Low FOM RDS(ON) × QG | |
| Extremely low losses due tOvery low Eon and Eoff | |
| Qualified for industrial grade applications according tOJEDEC | |
| Excellent stability and uniformity | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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