O650V N-Channel MOSFET
$0
650V 8A
RDS(ON) Typ = 500mmOhm @ VGS = 10V
Low FOM RDS(ON) × QG
Extremely low losses due tOvery low Eon and Eoff
Qualified for industrial grade applications according tOJEDEC
Excellent stability and uniformity
- Description
- Reviews (0)
Description
The OCS65R600RM is a high-performance 650V N-Channel MOSFET designed for industrial-grade applications. It features extremely low switching losses (low Eon and Eoff), excellent stability, and uniformity, making it ideal for power-sensitive designs like SMPS, LED lighting, and EV chargers. With a typical on-resistance of 500mmOhm and a 8A continuous drain current, it provides an optimized Figure of Merit (FOM).
OCS65R600RM |
|
|
O650V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
650 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
500 |
|
Qg (nC) |
400 |
|
IF (A) |
400 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
|
Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
Rds(on) Typ (Ohm) |
500 |
|
VRRM (V) |
650 |
|
TJ ( degC) |
25 |
Features |
|
|
650V 8A |
|
|
RDS(ON) Typ = 500mmOhm @ VGS = 10V |
|
|
Low FOM RDS(ON) × QG |
|
|
Extremely low losses due tOvery low Eon and Eoff |
|
|
Qualified for industrial grade applications according tOJEDEC |
|
|
Excellent stability and uniformity |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.