OAN070N65K 650V GaN Power Transistor
$0
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN070N65K is a high-performance 650V Gallium Nitride (GaN) power transistor optimized for high efficiency and low switching losses. Designed for ease of use, it is compatible with standard gate drivers and features an excellent QG x RDS(on) figure of merit, making it suitable for telecom, datacom, automotive, and power supply applications.
OAN070N65K |
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OAN070N65K 650V GaN Power Transistor |
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Property |
Value |
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Vrrm (V) |
650 |
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BVdss (V) |
650 |
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Grade |
GaN |
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RDS(ON) (mOhm) |
70 |
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Qg (nC) |
12.5 |
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ID @25 degC (A) |
21 |
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Pd (W) |
60 |
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Qr (nC) |
80 |
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VRRM (V) |
650 |
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TJ ( degC) |
150 |
Features |
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Easy tOuse, compatible with standard gate drivers |
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Excellent QG x RDS(on) figure of merit (FOM) |
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|
Low QRR, nOfree-wheeling diode required |
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Low switching loss |
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RoHS compliant and Halogen-free |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
There are no reviews yet.