OAN180N70K 700V GaN Power Transistor
$0
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN180N70K is a 700V Gallium Nitride (GaN) Power Transistor designed for high-efficiency power applications. It offers low on-resistance, exceptional gate charge characteristics, and nOrequirement for a free-wheeling diode, making it ideal for high-density power supplies and USB PD adapters.
OAN180N70K |
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OAN180N70K 700V GaN Power Transistor |
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Property |
Value |
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Vrrm (V) |
700 |
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BVdss (V) |
700 |
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Grade |
GaN |
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RDS(ON) (mOhm) |
180 |
|
Qg (nC) |
15.8 |
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ID @25 degC (A) |
10.4 |
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Ciss Typ (pF) |
502 |
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Coss Typ (pF) |
21 |
|
Pd (W) |
37 |
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VRRM (V) |
700 |
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TJ ( degC) |
150 |
Features |
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Easy tOuse, compatible with standard gate drivers |
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Excellent QG x RDS(on) figure of merit (FOM) |
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Low QRR, nOfree-wheeling diode required |
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Low switching loss |
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RoHS compliant and Halogen-free |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
There are no reviews yet.