OAN180N70K 700V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
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Description
The OAN180N70K is a 700V Gallium Nitride (GaN) Power Transistor designed for high-efficiency power applications. It offers low on-resistance, exceptional gate charge characteristics, and nOrequirement for a free-wheeling diode, making it ideal for high-density power supplies and USB PD adapters.
OAN180N70K | |
| OAN180N70K 700V GaN Power Transistor | |
Property | Value |
| Vrrm (V) | 700 |
| BVdss (V) | 700 |
| Grade | GaN |
| RDS(ON) (mOhm) | 180 |
| Qg (nC) | 15.8 |
| ID @25 degC (A) | 10.4 |
| Ciss Typ (pF) | 502 |
| Coss Typ (pF) | 21 |
| Pd (W) | 37 |
| VRRM (V) | 700 |
| TJ ( degC) | 150 |
Features | |
| Easy tOuse, compatible with standard gate drivers | |
| Excellent QG x RDS(on) figure of merit (FOM) | |
| Low QRR, nOfree-wheeling diode required | |
| Low switching loss | |
| RoHS compliant and Halogen-free | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
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