OB5819W Schottky Barrier Diodes
$0
Metal silicon junction, majority carrier conduction
Guarding for overvoltage protection
Low power loss, high efficiency
High current capability
low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
- Description
- Reviews (0)
Description
free wheeling, and polarity protection applications OB5819W Schottky Barrier Diodes are high- efficiency components featuring a metal silicon junction and majority carrier conduction. Designed for low voltage, high frequency inverters, free wheeling, and polarity protection, they offer low forward voltage drop, high current capability, and guarding for overvoltage protection in a compact SOD-123 package.
OB5819W |
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OB5819W Schottky Barrier Diodes |
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Property |
Value |
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Vrrm (V) |
40 |
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Package |
SOD-123 |
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IF (A) |
1 |
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IFSM (A) |
25 |
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VF @25 degC (V) |
0.6 |
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IR @25 degC (μA) |
1 mA |
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IF(AV) (A) |
1 |
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VRRM (V) |
40 |
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VF (V) |
0.6 |
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IR (μA) |
25 mA |
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TJ ( degC) |
-55 |
Features |
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Metal silicon junction, majority carrier conduction |
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Guarding for overvoltage protection |
|
|
Low power loss, high efficiency |
|
|
High current capability |
|
|
low forward voltage drop |
|
|
High surge capability |
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For use in low voltage, high frequency inverters, |
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Applications |
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Power Supply, AC/DC Conversion, Rectification Circuits |
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Reviews
There are no reviews yet.