OCS70R260D SJMOS N-MOSFET 700V
Multi-Epi process SJ-FET
700V @TJ = 25 °C
Typ. RDS(on) = 0.22mOhm
Ultra Low Gate Charge (typ. Qg = 28nC)
100% avalanche tested SJ-FET is new generation of high voltage MOSFET
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Description
family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored tOminimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
OCS70R260D | |
| OCS70R260D SJMOS N-MOSFET 700V | |
Property | Value |
| Vrrm (V) | 700 |
| BVdss (V) | 700 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | 0.22 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 28 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 100 |
| Coss Typ (pF) | 100 |
| Crss Typ (pF) | 100 |
| Pd (W) | 25 |
| VRRM (V) | 700 |
| TJ ( degC) | 700 |
Features | |
| Multi-Epi process SJ-FET | |
| 700V @TJ = 25 °C | |
| Typ. RDS(on) = 0.22mOhm | |
| Ultra Low Gate Charge (typ. Qg = 28nC) | |
| 100% avalanche tested SJ-FET is new generation of high voltage MOSFET | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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