OCS70R260D SJMOS N-MOSFET 700V
$0
Multi-Epi process SJ-FET
700V @TJ = 25 °C
Typ. RDS(on) = 0.22mOhm
Ultra Low Gate Charge (typ. Qg = 28nC)
100% avalanche tested SJ-FET is new generation of high voltage MOSFET
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Description
family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored tOminimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
OCS70R260D |
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OCS70R260D SJMOS N-MOSFET 700V |
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Property |
Value |
|
Vrrm (V) |
700 |
|
BVdss (V) |
700 |
|
Grade |
MOSFET |
|
Package |
TO-220 |
|
RDS(ON) (mOhm) |
0.22 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
28 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
100 |
|
Coss Typ (pF) |
100 |
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Crss Typ (pF) |
100 |
|
Pd (W) |
25 |
|
VRRM (V) |
700 |
|
TJ ( degC) |
700 |
Features |
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Multi-Epi process SJ-FET |
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700V @TJ = 25 °C |
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Typ. RDS(on) = 0.22mOhm |
|
|
Ultra Low Gate Charge (typ. Qg = 28nC) |
|
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100% avalanche tested SJ-FET is new generation of high voltage MOSFET |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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