OCS80R500 Super-Junction Power
11A, 800V, RDS(on) typ. = 0.46mOhm@VGS = 10 V
Low gate charge (typical 38nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
- Description
- Reviews (0)
Description
This Power MOSFET is produced using HT’s Advanced Super-Junction technology. This advanced technology has been especially tailored tOminimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion.
OCS80R500 |
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OCS80R500 Super-Junction Power |
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Property |
Value |
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BVdss (V) |
800 |
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Grade |
MOSFET |
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Package |
TO-220 |
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RDS(ON) (mOhm) |
-11 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
640 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
0 |
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Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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Rds(on) Typ (Ohm) |
-11 |
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TJ ( degC) |
25 |
Features |
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11A, 800V, RDS(on) typ. = 0.46mOhm@VGS = 10 V |
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Low gate charge (typical 38nC) |
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High ruggedness |
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Fast switching |
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100% avalanche tested |
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Improved dv/dt capability |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.