OGS200N085 N-CHANNEL MOSFET
$0
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS200N085 is an N-Channel MOSFET designed for high-efficiency power conversion. It features a low on-state resistance (typical 2.20mmOhm at Vgs=10V) and a high drain current capability of 200A, making it suitable for isolated DC/DC converters and synchronous rectification in industrial and telecommunication applications.
OGS200N085 |
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OGS200N085 N-CHANNEL MOSFET |
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Property |
Value |
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BVdss (V) |
85 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
2.2 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
130 |
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ID @25 degC (A) |
85 |
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Ciss Typ (pF) |
8930 |
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Pd (W) |
25 |
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TJ ( degC) |
25 |
Features |
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Low gate charge |
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Low Rdson |
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Fast switching |
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100% avalanche tested |
|
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Improved dv/dt capability |
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RoHS product |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.