OGS200N085 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS200N085 is an N-Channel MOSFET designed for high-efficiency power conversion. It features a low on-state resistance (typical 2.20mmOhm at Vgs=10V) and a high drain current capability of 200A, making it suitable for isolated DC/DC converters and synchronous rectification in industrial and telecommunication applications.
OGS200N085 | |
| OGS200N085 N-CHANNEL MOSFET | |
Property | Value |
| BVdss (V) | 85 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 2.2 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 130 |
| ID @25 degC (A) | 85 |
| Ciss Typ (pF) | 8930 |
| Pd (W) | 25 |
| TJ ( degC) | 25 |
Features | |
| Low gate charge | |
| Low Rdson | |
| Fast switching | |
| 100% avalanche tested | |
| Improved dv/dt capability | |
| RoHS product | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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