OGS60N10F 100V N-Channel MOSFET
Fast Switching
Low Gate Charge and RDS(ON)
Low Reverse transfer capacitances
- Description
- Reviews (0)
Description
The OGS60N10F uses super trench technology and design tOprovide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is DFN 5*6 which accords with the ROHS standard and Halogen/Pb Free standard.
OGS60N10F | |
| OGS60N10F 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 10 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 96 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Fast Switching | |
| Low Gate Charge and RDS(ON) | |
| Low Reverse transfer capacitances | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
There are no reviews yet.