OGS80N060L N-Channel Trench Power

$0

VDS = 60V, ID = 80A
RDS(ON) = 5.8mmOhm, typical @ VGS = 10V
RDS(ON) = 7.5mmOhm, typical @ VGS = 4.5V
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS TESTED!
100% °”Vds TESTED!

SKU: OGS80N060L Category: MOSFETs & Power Transistors

Description

The OGS80N060L series of devices uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due tOan extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

OGS80N060L

OGS80N060L N-Channel Trench Power

 

Property

Value

BVdss (V)

0

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

5.8

VTH @25 degC (V)

0

Qg (nC)

30

IF (A)

25

ID @25 degC (A)

0

Ciss Typ (pF)

30

Coss Typ (pF)

30

Crss Typ (pF)

30

Pd (W)

105

TJ ( degC)

25

Features

VDS = 60V, ID = 80A

RDS(ON) = 5.8mmOhm, typical @ VGS = 10V

RDS(ON) = 7.5mmOhm, typical @ VGS = 4.5V

Excellent gate charge x RDS(on) product (FOM)

Very low on-resistance RDS(on)

150 °C operating temperature

Pb-free lead plating

100% UIS TESTED!

100% °”Vds TESTED!

Applications

Power Management, Switching Circuits, Motor Drives

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