OGS80N08 80V N-channel Enhancement
Fast Switching
High avalanche Current
Low on Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% °”VDS Test
- Description
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Description
These N-channel enhancement mode power MOSFETs use advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
OGS80N08 | |
| OGS80N08 80V N-channel Enhancement | |
Property | Value |
| Vrrm (V) | 80 |
| BVdss (V) | 80 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 40 |
| IF (A) | 3 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 80 |
| TJ ( degC) | 3 |
Features | |
| Fast Switching | |
| High avalanche Current | |
| Low on Resistance | |
| Low Gate Charge | |
| Low Reverse Transfer Capacitances | |
| 100% Single Pulse Avalanche Energy Test | |
| 100% °”VDS Test | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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