OGS80N08 80V N-channel Enhancement
$0
Fast Switching
High avalanche Current
Low on Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% °”VDS Test
- Description
- Reviews (0)
Description
These N-channel enhancement mode power MOSFETs use advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
OGS80N08 |
|
|
OGS80N08 80V N-channel Enhancement |
|
Property |
Value |
|
Vrrm (V) |
80 |
|
BVdss (V) |
80 |
|
Grade |
MOSFET |
|
Package |
TO-220 |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
40 |
|
IF (A) |
3 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
|
Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
VRRM (V) |
80 |
|
TJ ( degC) |
3 |
Features |
|
|
Fast Switching |
|
|
High avalanche Current |
|
|
Low on Resistance |
|
|
Low Gate Charge |
|
|
Low Reverse Transfer Capacitances |
|
|
100% Single Pulse Avalanche Energy Test |
|
|
100% °”VDS Test |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.