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Description
VGS=10V/20A • RDS(ON)MAX=12.0mmOhm @ VGS=4.5V/20A • Low gate charge • Low Ciss • Fast switching • 100% avalanche tested • Improved dv/dt capability • 80A, 100V, RDS(ON)MAX=10.0mmOhm @ The OGS80N10 is an 80 Amps, 100 Volts N-CHANNEL Power MOSFET designed for high performance power applications. It features extremely low drain-source on-state resistance, low gate charge, and low input capacitance, resulting in fast switching speeds and high efficiency. The device is 100% avalanche tested and offers improved dv/dt capability for robust operation in demanding environments.
OGS80N10 | |
| OGS80N10 N-CHANNEL Power MOSFET | |
Property | Value |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 12 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 80 |
| IF (A) | 50 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 |
| Coss Typ (pF) | 1 |
| Crss Typ (pF) | 1 |
| Pd (W) | 25 |
| TJ ( degC) | 100 |
Features | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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