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Description
VGS=10V/20A • RDS(ON)MAX=12.0mmOhm @ VGS=4.5V/20A • Low gate charge • Low Ciss • Fast switching • 100% avalanche tested • Improved dv/dt capability • 80A, 100V, RDS(ON)MAX=10.0mmOhm @ The OGS80N10 is an 80 Amps, 100 Volts N-CHANNEL Power MOSFET designed for high performance power applications. It features extremely low drain-source on-state resistance, low gate charge, and low input capacitance, resulting in fast switching speeds and high efficiency. The device is 100% avalanche tested and offers improved dv/dt capability for robust operation in demanding environments.
OGS80N10 |
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OGS80N10 N-CHANNEL Power MOSFET |
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Property |
Value |
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BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
12 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
80 |
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IF (A) |
50 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
25 |
|
Coss Typ (pF) |
1 |
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Crss Typ (pF) |
1 |
|
Pd (W) |
25 |
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TJ ( degC) |
100 |
Features |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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