OT15T135W N-CHANNEL IGBT
Low gate charge
TrenchFS technology
Saturation voltage: VCE(sat), typ = 2.1V @ IC= 15A and TC = 25°C
RoHS product
- Description
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Description
The OT15T135W is an N-channel Integrated Gate Bipolar Transistor (IGBT) utilizing Trench FS technology. It is optimized for power switch circuits in applications such as induction cookers (IH), featuring low gate charge and a low typical saturation voltage of 2.1V.
OT15T135W | |
| OT15T135W N-CHANNEL IGBT | |
Property | Value |
| BVCEs (V) | 1350 |
| Grade | IGBT |
| Package | ABS |
| IF (A) | 15 |
| IC @100 degC (A) | 15 |
| VCE(sat) Typ (V) | 2.1 |
| Pd (W) | 25 |
| TJ ( degC) | 150 |
Features | |
| Low gate charge | |
| TrenchFS technology | |
| Saturation voltage: VCE(sat), typ = 2.1V @ IC= 15A and TC = 25°C | |
| RoHS product | |
Applications | |
| Motor Control, Inverters, Power Conversion Systems | |
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