OT15T135W N-CHANNEL IGBT
$0
Low gate charge
TrenchFS technology
Saturation voltage: VCE(sat), typ = 2.1V @ IC= 15A and TC = 25°C
RoHS product
- Description
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Description
The OT15T135W is an N-channel Integrated Gate Bipolar Transistor (IGBT) utilizing Trench FS technology. It is optimized for power switch circuits in applications such as induction cookers (IH), featuring low gate charge and a low typical saturation voltage of 2.1V.
OT15T135W |
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OT15T135W N-CHANNEL IGBT |
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Property |
Value |
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BVCEs (V) |
1350 |
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Grade |
IGBT |
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Package |
ABS |
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IF (A) |
15 |
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IC @100 degC (A) |
15 |
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VCE(sat) Typ (V) |
2.1 |
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Pd (W) |
25 |
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TJ ( degC) |
150 |
Features |
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Low gate charge |
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TrenchFS technology |
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Saturation voltage: VCE(sat), typ = 2.1V @ IC= 15A and TC = 25°C |
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RoHS product |
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Applications |
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Motor Control, Inverters, Power Conversion Systems |
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Reviews
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