OT20N65 N-CHANNEL IGBT
$0
Low gate charge
Trench FS Technology
saturation voltage: Vce(sat), typ = 1.85V@Id = 20A and TC = 25°C
RoHS product
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Description
The OT20N65 is an N-channel insulated gate bipolar transistor (IGBT) utilizing Trench FS technology, which provides high efficiency and low switching losses. It features a typical saturation voltage of 1.85V at 20A and low gate charge, making it ideal for high-performance power conversion applications such as general purpose inverters, UPS systems, and motor control.
OT20N65 |
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OT20N65 N-CHANNEL IGBT |
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Property |
Value |
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BVCEs (V) |
650 |
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Grade |
IGBT |
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Package |
ABS |
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Qg (nC) |
480 |
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IF (A) |
100 |
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IC @100 degC (A) |
20 |
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VCE(sat) Typ (V) |
1.85 |
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Pd (W) |
25 |
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TJ ( degC) |
-55 |
Features |
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Low gate charge |
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Trench FS Technology |
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saturation voltage: Vce(sat), typ = 1.85V@Id = 20A and TC = 25°C |
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RoHS product |
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Applications |
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Motor Control, Inverters, Power Conversion Systems |
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