OT20N65 N-CHANNEL IGBT
Low gate charge
Trench FS Technology
saturation voltage: Vce(sat), typ = 1.85V@Id = 20A and TC = 25°C
RoHS product
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Description
The OT20N65 is an N-channel insulated gate bipolar transistor (IGBT) utilizing Trench FS technology, which provides high efficiency and low switching losses. It features a typical saturation voltage of 1.85V at 20A and low gate charge, making it ideal for high-performance power conversion applications such as general purpose inverters, UPS systems, and motor control.
OT20N65 | |
| OT20N65 N-CHANNEL IGBT | |
Property | Value |
| BVCEs (V) | 650 |
| Grade | IGBT |
| Package | ABS |
| Qg (nC) | 480 |
| IF (A) | 100 |
| IC @100 degC (A) | 20 |
| VCE(sat) Typ (V) | 1.85 |
| Pd (W) | 25 |
| TJ ( degC) | -55 |
Features | |
| Low gate charge | |
| Trench FS Technology | |
| saturation voltage: Vce(sat), typ = 1.85V@Id = 20A and TC = 25°C | |
| RoHS product | |
Applications | |
| Motor Control, Inverters, Power Conversion Systems | |
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