OTS100N03R
N-Channel:30V 100A
RDS(on)Typ = 2.9mmOhm@VGS = 10 V
RDS(on)Typ = 4.2mmOhm@VGS = 4.5 V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
- Description
- Reviews (0)
Description
This Power MOSFET is produced using HT’s advanced TRENCH technology. This advanced technology has been especially tailored tOminimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
OTS100N03R |
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OTS100N03R |
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Property |
Value |
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BVdss (V) |
30 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
2.9 |
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VTH @25 degC (V) |
0 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
15 |
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Coss Typ (pF) |
15 |
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Crss Typ (pF) |
15 |
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Pd (W) |
25 |
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Rds(on) Typ (Ohm) |
2.9 |
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TJ ( degC) |
25 |
Features |
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N-Channel:30V 100A |
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RDS(on)Typ = 2.9mmOhm@VGS = 10 V |
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RDS(on)Typ = 4.2mmOhm@VGS = 4.5 V |
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Very Low On-resistance RDS(ON) |
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Low Crss |
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Fast switching |
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100% avalanche tested |
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Improved dv/dt capability |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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