OTS100N04R 40V N-Channel MOSFET
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Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=100A
RDS(on) : 2.4 mmOhm (Typ) @VG=10V
100% Avalanche Tested OTS100N04R is an N-channel power MOSFET designed for high-efficiency switching and power management applications. It offers low intrinsic
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Description
capacitance and excellent switching characteristics, alongside an extended safe operating area. The device is 100% avalanche tested and features a typical on-resistance of 2.4 mmOhm at a 10V gate-source voltage.
OTS100N04R |
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OTS100N04R 40V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
40 |
|
BVdss (V) |
40 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
2.4 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
75 |
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IF (A) |
25 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
20 PF |
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Coss Typ (pF) |
20 PF |
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Crss Typ (pF) |
20 PF |
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Pd (W) |
25 |
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VRRM (V) |
40 |
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TJ ( degC) |
25 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 75nC (Typ.). |
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BVDSS=40V,ID=100A |
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RDS(on) : 2.4 mmOhm (Typ) @VG=10V |
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100% Avalanche Tested OTS100N04R is an N-channel power MOSFET designed for high-efficiency switching and power management applications. It offers low intrinsic |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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