OTS100N04R 40V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=100A
RDS(on) : 2.4 mmOhm (Typ) @VG=10V
100% Avalanche Tested OTS100N04R is an N-channel power MOSFET designed for high-efficiency switching and power management applications. It offers low intrinsic
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Description
capacitance and excellent switching characteristics, alongside an extended safe operating area. The device is 100% avalanche tested and features a typical on-resistance of 2.4 mmOhm at a 10V gate-source voltage.
OTS100N04R | |
| OTS100N04R 40V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 40 |
| BVdss (V) | 40 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 2.4 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 75 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 20 PF |
| Coss Typ (pF) | 20 PF |
| Crss Typ (pF) | 20 PF |
| Pd (W) | 25 |
| VRRM (V) | 40 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 75nC (Typ.). | |
| BVDSS=40V,ID=100A | |
| RDS(on) : 2.4 mmOhm (Typ) @VG=10V | |
| 100% Avalanche Tested OTS100N04R is an N-channel power MOSFET designed for high-efficiency switching and power management applications. It offers low intrinsic | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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