OTS100N10
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ONSÍT_x0011_O“u5[¹
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{&T_x0008_ RoHS s¯OÝh_x0007_QÆ mode power MOS field effect transistors are manufactured using advanced LVMOS process
- Description
- Reviews (0)
Description
technology. This design features low on-resistance, excellent switching performance, and high avalanche breakdown tolerance. It is ideally suited for power management applications in uninterruptible power supplies (UPS) and inverter systems.
OTS100N10 |
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OTS100N10 |
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Property |
Value |
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BVdss (V) |
0 |
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Grade |
MOSFET |
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RDS(ON) (mOhm) |
100 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
40 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
1 |
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Coss Typ (pF) |
1 |
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Crss Typ (pF) |
1 |
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Pd (W) |
25 |
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TJ ( degC) |
25 |
Features |
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ONh_x0005_gu5ƒw |
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ONSÍT_x0011_O“u5[¹ |
|
|
_Qs_x001f_^¦_ë |
|
|
cÐSGN† dv/dt €ýR› |
|
|
100%-ê])mK‹Õ |
|
|
eà”Å{¡_x001a_•@B |
|
|
{&T_x0008_ RoHS s¯OÝh_x0007_QÆ mode power MOS field effect transistors are manufactured using advanced LVMOS process |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.