OTS100N10
ONh_x0005_gu5ƒw
ONSÍT_x0011_O“u5[¹
_Qs_x001f_^¦_ë
cÐSGN† dv/dt €ýR›
100%-ê])mK‹Õ
eà”Å{¡_x001a_•@B
{&T_x0008_ RoHS s¯OÝh_x0007_QÆ mode power MOS field effect transistors are manufactured using advanced LVMOS process
- Description
- Reviews (0)
Description
technology. This design features low on-resistance, excellent switching performance, and high avalanche breakdown tolerance. It is ideally suited for power management applications in uninterruptible power supplies (UPS) and inverter systems.
OTS100N10 | |
| OTS100N10 | |
Property | Value |
| BVdss (V) | 0 |
| Grade | MOSFET |
| RDS(ON) (mOhm) | 100 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 40 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 1 |
| Coss Typ (pF) | 1 |
| Crss Typ (pF) | 1 |
| Pd (W) | 25 |
| TJ ( degC) | 25 |
Features | |
| ONh_x0005_gu5ƒw | |
| ONSÍT_x0011_O“u5[¹ | |
| _Qs_x001f_^¦_ë | |
| cÐSGN† dv/dt €ýR› | |
| 100%-ê])mK‹Õ | |
| eà”Å{¡_x001a_•@B | |
| {&T_x0008_ RoHS s¯OÝh_x0007_QÆ mode power MOS field effect transistors are manufactured using advanced LVMOS process | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
There are no reviews yet.