OTS15N10R N-CHANNEL MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 12.5nC (Typ.).
BVDSS=100V,ID= 15A
RDS(on) : 0.14mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS15N10R is a 100V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. It is 100% avalanche tested and offers a maximum drain-source on-state resistance of 0.14mOhm at VGS=10V.
OTS15N10R |
|
|
OTS15N10R N-CHANNEL MOSFET |
|
Property |
Value |
|
BVdss (V) |
100 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.14 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
15.5 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
207 |
|
Coss Typ (pF) |
120 |
|
Crss Typ (pF) |
90 |
|
Pd (W) |
30 |
|
TJ ( degC) |
25 |
Features |
|
|
Low Intrinsic Capacitances. |
|
|
Excellent Switching Characteristics. |
|
|
Extended Safe Operating Area. |
|
|
Unrivalled Gate Charge :Qg= 12.5nC (Typ.). |
|
|
BVDSS=100V,ID= 15A |
|
|
RDS(on) : 0.14mOhm (Max) @VG=10V |
|
|
100% Avalanche Tested |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.