OTS15N10R N-CHANNEL MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 12.5nC (Typ.).
BVDSS=100V,ID= 15A
RDS(on) : 0.14mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS15N10R is a 100V N-Channel MOSFET featuring low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. It is 100% avalanche tested and offers a maximum drain-source on-state resistance of 0.14mOhm at VGS=10V.
OTS15N10R | |
| OTS15N10R N-CHANNEL MOSFET | |
Property | Value |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.14 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 15.5 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 207 |
| Coss Typ (pF) | 120 |
| Crss Typ (pF) | 90 |
| Pd (W) | 30 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 12.5nC (Typ.). | |
| BVDSS=100V,ID= 15A | |
| RDS(on) : 0.14mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
There are no reviews yet.