OTS3407 30V P-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
BVDSS=-30V,ID=-4.1A
RDS(on) : 65mmOhm (Max) @VG=-10V
100% Avalanche Tested
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Description
The OTS3407 is a 30V P-Channel MOSFET designed for high-efficiency power management and switching applications. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. The device is 100% avalanche tested and offers a low typical gate charge of 10nC, ensuring reliable performance in demanding environments.
OTS3407 |
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OTS3407 30V P-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
30 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
65 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
10 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
-15 PF |
|
Coss Typ (pF) |
-15 PF |
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Crss Typ (pF) |
-15 PF |
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Pd (W) |
1.4 |
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VRRM (V) |
30 |
|
TJ ( degC) |
-55 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 10nC (Typ.). |
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BVDSS=-30V,ID=-4.1A |
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RDS(on) : 65mmOhm (Max) @VG=-10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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