OTS3407 30V P-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
BVDSS=-30V,ID=-4.1A
RDS(on) : 65mmOhm (Max) @VG=-10V
100% Avalanche Tested
- Description
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Description
The OTS3407 is a 30V P-Channel MOSFET designed for high-efficiency power management and switching applications. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. The device is 100% avalanche tested and offers a low typical gate charge of 10nC, ensuring reliable performance in demanding environments.
OTS3407 | |
| OTS3407 30V P-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 65 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 10 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | -15 PF |
| Coss Typ (pF) | -15 PF |
| Crss Typ (pF) | -15 PF |
| Pd (W) | 1.4 |
| VRRM (V) | 30 |
| TJ ( degC) | -55 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 10nC (Typ.). | |
| BVDSS=-30V,ID=-4.1A | |
| RDS(on) : 65mmOhm (Max) @VG=-10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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