OTS40P04F -40V P-Channel MOSFET
$0
Advanced Trench Technology
Ultra Low Gate Charge:Qg=68nC (Typ.)
VDSS=-40V, ID=-40A
Rds(on):9.2m mOhm (Typ.) @VG=-10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS40P04F is an advanced trench technology -40V P-channel MOSFET designed for efficient power management and switching. It features a continuous drain current of -40A, ultra-low gate charge of 68nC, and a typical on-resistance of 9.2mmOhm at VGS=-10V. The device is 100% avalanche tested tOensure reliability in demanding circuit designs.
OTS40P04F |
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OTS40P04F -40V P-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
40 |
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BVdss (V) |
-40 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
9.2 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
68 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
-20 |
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Coss Typ (pF) |
-20 |
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Crss Typ (pF) |
-20 |
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Pd (W) |
25 |
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VRRM (V) |
40 |
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TJ ( degC) |
25 |
Features |
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Advanced Trench Technology |
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Ultra Low Gate Charge:Qg=68nC (Typ.) |
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VDSS=-40V, ID=-40A |
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Rds(on):9.2m mOhm (Typ.) @VG=-10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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