OTS40P04F -40V P-Channel MOSFET
Advanced Trench Technology
Ultra Low Gate Charge:Qg=68nC (Typ.)
VDSS=-40V, ID=-40A
Rds(on):9.2m mOhm (Typ.) @VG=-10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS40P04F is an advanced trench technology -40V P-channel MOSFET designed for efficient power management and switching. It features a continuous drain current of -40A, ultra-low gate charge of 68nC, and a typical on-resistance of 9.2mmOhm at VGS=-10V. The device is 100% avalanche tested tOensure reliability in demanding circuit designs.
OTS40P04F | |
| OTS40P04F -40V P-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 40 |
| BVdss (V) | -40 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 9.2 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 68 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | -20 |
| Coss Typ (pF) | -20 |
| Crss Typ (pF) | -20 |
| Pd (W) | 25 |
| VRRM (V) | 40 |
| TJ ( degC) | 25 |
Features | |
| Advanced Trench Technology | |
| Ultra Low Gate Charge:Qg=68nC (Typ.) | |
| VDSS=-40V, ID=-40A | |
| Rds(on):9.2m mOhm (Typ.) @VG=-10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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