Silicon Carbide Schottky Diode 1200 V, 40 A
$0
Low conduction loss due tOlow VF
Extremely low switching loss by tiny QC
Highly rugged due tObetter surge current
Industrial standard quality and reliability
- Description
- Reviews (0)
Description
This product family is HT’s second generation SiC JBS, with lower VF and offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by HT.
OSC40D120W2L |
|
|
Silicon Carbide Schottky Diode 1200 V, 40 A |
|
Property |
Value |
|
Vrrm (V) |
1200 |
|
IF (A) |
1.4 |
|
IFSM (A) |
280 |
|
VF @25 degC (V) |
1.4 |
|
VF @175 degC (V) |
2 |
|
IR @25 degC (μA) |
5 |
|
IR @175 degC (μA) |
200 |
|
Pd (W) |
25 |
|
VRRM (V) |
1200 |
|
VF (V) |
1.4 |
|
IR (μA) |
5 |
|
TJ ( degC) |
1.4 |
Features |
|
|
Low conduction loss due tOlow VF |
|
|
Extremely low switching loss by tiny QC |
|
|
Highly rugged due tObetter surge current |
|
|
Industrial standard quality and reliability |
|
Applications |
|
|
General Electronic Applications |
|
Reviews
There are no reviews yet.