40V N-Channel MOSFET

Low Intrinsic Capacitances
Excellent Switching Characteristics
Extended Safe Operating Area
Unrivalled Gate Charge : Qg= 40nC (Typ.)
BVDSS=40V, ID=70A
RDS(on) : 4.5mmOhm (Typ) @VGS=10V
100% Avalanche Tested

SKU: OTS70N04R Category: MOSFETs & Power Transistors

Description

The OTS70N04R is a 40V N-Channel MOSFET designed for high efficiency with low intrinsic capacitances and excellent switching characteristics. It features an extended safe operating area, an unrivalled gate charge of 40nC (typical), and is 100% avalanche tested for reliability in demanding applications.

OTS70N04R

40V N-Channel MOSFET

 

Property

Value

Vrrm (V)

40

BVdss (V)

40

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

4.5

VTH @25 degC (V)

0

Qg (nC)

40

IF (A)

25

ID @25 degC (A)

0

Ciss Typ (pF)

15 PF

Coss Typ (pF)

15 PF

Crss Typ (pF)

15 PF

Pd (W)

25

VRRM (V)

40

TJ ( degC)

25

Features

Low Intrinsic Capacitances

Excellent Switching Characteristics

Extended Safe Operating Area

Unrivalled Gate Charge : Qg= 40nC (Typ.)

BVDSS=40V, ID=70A

RDS(on) : 4.5mmOhm (Typ) @VGS=10V

100% Avalanche Tested

Applications

Power Management, Switching Circuits, Motor Drives

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