OTS65P08R -80V P-Channel MOSFET
80V, -65A
RDS(ON) Typ = 13.3mmOhm @ VGS = -10V
RDS(ON) Typ = 14.9mmOhm @ VGS = -4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OTS65P08R is an -80V, -65A P-Channel MOSFET featuring advanced trench technology, excellent RDS(ON), and low gate charge. It is 100% UIS and °”Vds tested, making it suitable for load switching, PWM applications, and power management.
OTS65P08R | |
| OTS65P08R -80V P-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 80 |
| BVdss (V) | 80 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 13.3 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| Rds(on) Typ (Ohm) | 13.3 |
| VRRM (V) | 80 |
| TJ ( degC) | 25 |
Features | |
| 80V, -65A | |
| RDS(ON) Typ = 13.3mmOhm @ VGS = -10V | |
| RDS(ON) Typ = 14.9mmOhm @ VGS = -4.5V | |
| Advanced Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |


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