OTS65P08R -80V P-Channel MOSFET
80V, -65A
RDS(ON) Typ = 13.3mmOhm @ VGS = -10V
RDS(ON) Typ = 14.9mmOhm @ VGS = -4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OTS65P08R is an -80V, -65A P-Channel MOSFET featuring advanced trench technology, excellent RDS(ON), and low gate charge. It is 100% UIS and °”Vds tested, making it suitable for load switching, PWM applications, and power management.
OTS65P08R |
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OTS65P08R -80V P-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
80 |
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BVdss (V) |
80 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
13.3 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
0 |
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Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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Rds(on) Typ (Ohm) |
13.3 |
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VRRM (V) |
80 |
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TJ ( degC) |
25 |
Features |
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80V, -65A |
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RDS(ON) Typ = 13.3mmOhm @ VGS = -10V |
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RDS(ON) Typ = 14.9mmOhm @ VGS = -4.5V |
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Advanced Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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