60V N-Channel Enhancement Mode
VDS = 60V, ID = 0.3A
RDS(ON) < 4mOhm @ VGS=5V
RDS(ON) < 3mOhm @ VGS=10V
ESD Rating: HBM 2000V
High power and current handing capability
Lead free product is acquired
Surface mount package
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc.
Battery operated systems
Solid-state relays
- Description
- Reviews (0)
Description
The O2N7002K is a 60V N-Channel enhancement mode MOSFET designed for high power and current handling applications. It features a low on-resistance of less than 3mOhm at 10V gate voltage and includes an ESD rating of 2000V (HBM), making it suitable for logic-level interfaces, relay drivers, and battery-operated systems.
O2N7002K | |
| 60V N-Channel Enhancement Mode | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | BJT |
| Package | ABS |
| RDS(ON) (mOhm) | 4 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 1.7 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 21 |
| Coss Typ (pF) | 11 |
| Crss Typ (pF) | 4.2 |
| Pd (W) | 0.35 |
| VRRM (V) | 60 |
| TJ ( degC) | 150 |
Features | |
| VDS = 60V, ID = 0.3A | |
| RDS(ON) < 4mOhm @ VGS=5V | |
| RDS(ON) < 3mOhm @ VGS=10V | |
| ESD Rating: HBM 2000V | |
| High power and current handing capability | |
| Lead free product is acquired | |
| Surface mount package | |
| Direct logic-level interface: TTL/CMOS | |
| Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. | |
| Battery operated systems | |
| Solid-state relays | |
Applications | |
| Amplification, Switching, General Purpose Circuits | |
Reviews
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