60V N-Channel Enhancement Mode
$0
VDS = 60V, ID = 0.3A
RDS(ON) < 4mOhm @ VGS=5V
RDS(ON) < 3mOhm @ VGS=10V
ESD Rating: HBM 2000V
High power and current handing capability
Lead free product is acquired
Surface mount package
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc.
Battery operated systems
Solid-state relays
- Description
- Reviews (0)
Description
The O2N7002K is a 60V N-Channel enhancement mode MOSFET designed for high power and current handling applications. It features a low on-resistance of less than 3mOhm at 10V gate voltage and includes an ESD rating of 2000V (HBM), making it suitable for logic-level interfaces, relay drivers, and battery-operated systems.
O2N7002K |
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60V N-Channel Enhancement Mode |
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Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
60 |
|
Grade |
BJT |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
4 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
1.7 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
21 |
|
Coss Typ (pF) |
11 |
|
Crss Typ (pF) |
4.2 |
|
Pd (W) |
0.35 |
|
VRRM (V) |
60 |
|
TJ ( degC) |
150 |
Features |
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VDS = 60V, ID = 0.3A |
|
|
RDS(ON) < 4mOhm @ VGS=5V |
|
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RDS(ON) < 3mOhm @ VGS=10V |
|
|
ESD Rating: HBM 2000V |
|
|
High power and current handing capability |
|
|
Lead free product is acquired |
|
|
Surface mount package |
|
|
Direct logic-level interface: TTL/CMOS |
|
|
Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. |
|
|
Battery operated systems |
|
|
Solid-state relays |
|
Applications |
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Amplification, Switching, General Purpose Circuits |
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Reviews
There are no reviews yet.