60V N-Channel MOSFET
$0
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc
ESD Protected 2KV HBM
RDS(ON), VGS@10V, ID@500mA < 2.8mOhm
RDS(ON), VGS@4.5V, ID@200mA < 3.6mOhm
- Description
- Reviews (0)
Description
The O2N7002 is a 60V N-channel enhancement mode field-effect transistor produced using advanced trench process technology. This device is specifically designed for battery-operated systems, solid-state relay drivers, and low-voltage switching applications, offering high density cell design for ultra-low on-resistance and very low leakage current in the off condition.
O2N7002 |
|
|
60V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
60 |
|
Grade |
BJT |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
15 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
25 |
|
Coss Typ (pF) |
25 |
|
Crss Typ (pF) |
25 |
|
Pd (W) |
25 |
|
VRRM (V) |
60 |
|
TJ ( degC) |
-55 |
Features |
|
|
Advanced Trench Process Technology |
|
|
High Density Cell Design For Ultra Low On-Resistance |
|
|
Very Low Leakage Current In Off Condition |
|
|
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc |
|
|
ESD Protected 2KV HBM |
|
|
RDS(ON), VGS@10V, ID@500mA < 2.8mOhm |
|
|
RDS(ON), VGS@4.5V, ID@200mA < 3.6mOhm |
|
Applications |
|
|
Amplification, Switching, General Purpose Circuits |
|
Reviews
There are no reviews yet.