60V N-Channel MOSFET
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc
ESD Protected 2KV HBM
RDS(ON), VGS@10V, ID@500mA < 2.8mOhm
RDS(ON), VGS@4.5V, ID@200mA < 3.6mOhm
- Description
- Reviews (0)
Description
The O2N7002 is a 60V N-channel enhancement mode field-effect transistor produced using advanced trench process technology. This device is specifically designed for battery-operated systems, solid-state relay drivers, and low-voltage switching applications, offering high density cell design for ultra-low on-resistance and very low leakage current in the off condition.
O2N7002 | |
| 60V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | BJT |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 15 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 |
| Coss Typ (pF) | 25 |
| Crss Typ (pF) | 25 |
| Pd (W) | 25 |
| VRRM (V) | 60 |
| TJ ( degC) | -55 |
Features | |
| Advanced Trench Process Technology | |
| High Density Cell Design For Ultra Low On-Resistance | |
| Very Low Leakage Current In Off Condition | |
| Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc | |
| ESD Protected 2KV HBM | |
| RDS(ON), VGS@10V, ID@500mA < 2.8mOhm | |
| RDS(ON), VGS@4.5V, ID@200mA < 3.6mOhm | |
Applications | |
| Amplification, Switching, General Purpose Circuits | |
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