OMMBT5551

$0

This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10mA, VCE = 5.0V)

SKU: O2N5551 Category: Bipolar Transistors

Description

This device is an NPN General Purpose Amplifier designed for general purpose high voltage amplifiers and gas discharge display drivers.

O2N5551

OMMBT5551

 

Property

Value

BVCEs (V)

160

Grade

BJT

Package

SMA

IC @100 degC (A)

600

VGE(th) Typ (V)

1

Application frequency (kHz)

15.7

Pd (W)

625

TJ ( degC)

150

Features

This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

Suffix "-C" means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)

Suffix "-Y" means hFE 180~240 in 2N5551 (Test condition: IC = 10mA, VCE = 5.0V)

Applications

Amplification, Switching, General Purpose Circuits

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