60V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).
BVDSS=60V,ID=50A
RDS(on) : 0.02mOhm (Max) @VG=10V
100% Avalanche Tested
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Description
The OCS50N06C is a 60V N-Channel MOSFET designed with low intrinsic capacitances and excellent switching characteristics. It features an extended safe operating area and an unrivalled gate charge of 50nC (Typ.), ensuring efficient power management and switching performance. The device is 100% avalanche tested and available in a TO-220C package, providing high reliability for industrial applications.
OCS50N06C |
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|
60V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
60 |
|
Grade |
MOSFET |
|
Package |
TO-220 |
|
RDS(ON) (mOhm) |
0.02 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
50 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
30 PF |
|
Coss Typ (pF) |
30 PF |
|
Crss Typ (pF) |
30 PF |
|
Pd (W) |
85 |
|
VRRM (V) |
60 |
|
TJ ( degC) |
25 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
|
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Unrivalled Gate Charge :Qg= 50nC (Typ.). |
|
|
BVDSS=60V,ID=50A |
|
|
RDS(on) : 0.02mOhm (Max) @VG=10V |
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100% Avalanche Tested |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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