60V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).BVDSS=60V,ID=50A
RDS(on) : 0.02mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OCS50N06R is a 60V N-Channel MOSFET designed with low intrinsic capacitances and excellent switching characteristics. It features an extended safe operating area and is 100% avalanche tested, making it suitable for various power management applications in a TO-252 package.
OCS50N06R | |
| 60V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.02 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 50 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 30 PF |
| Coss Typ (pF) | 30 PF |
| Crss Typ (pF) | 30 PF |
| Pd (W) | 85 |
| VRRM (V) | 60 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 50nC (Typ.).BVDSS=60V,ID=50A | |
| RDS(on) : 0.02mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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