60V N-Channel MOSFET
$0
Improved dv/dt Capability, High Ruggedness
Maximum Junction Temperature Range (150°C)
Optimized for Power Management Applications
Low ON-Resistance (3.9 mmOhm typical at VGS=10V)
DFN3*3 Package
- Description
- Reviews (0)
Description
The OTS80N06A is a 60V N-Channel MOSFET designed with improved dv/dt capability and high ruggedness, making it suitable for a variety of power management applications. It features a maximum junction temperature of 150°C and is optimized for use in portable products such as H-bridges, inverters, and car chargers, as well as DC fans and brushless motors. It is housed in a compact DFN3*3 package for efficient power density.
OTS80N06A |
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60V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
60 |
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BVdss (V) |
60 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
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IF (A) |
20 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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VRRM (V) |
60 |
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TJ ( degC) |
150 |
Features |
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Improved dv/dt Capability, High Ruggedness |
|
|
Maximum Junction Temperature Range (150°C) |
|
|
Optimized for Power Management Applications |
|
|
Low ON-Resistance (3.9 mmOhm typical at VGS=10V) |
|
|
DFN3*3 Package |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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