60V N-Channel MOSFET
Improved dv/dt Capability, High Ruggedness
Maximum Junction Temperature Range (150°C)
Optimized for Power Management Applications
Low ON-Resistance (3.9 mmOhm typical at VGS=10V)
DFN3*3 Package
- Description
- Reviews (0)
Description
The OTS80N06A is a 60V N-Channel MOSFET designed with improved dv/dt capability and high ruggedness, making it suitable for a variety of power management applications. It features a maximum junction temperature of 150°C and is optimized for use in portable products such as H-bridges, inverters, and car chargers, as well as DC fans and brushless motors. It is housed in a compact DFN3*3 package for efficient power density.
OTS80N06A | |
| 60V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| IF (A) | 20 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 60 |
| TJ ( degC) | 150 |
Features | |
| Improved dv/dt Capability, High Ruggedness | |
| Maximum Junction Temperature Range (150°C) | |
| Optimized for Power Management Applications | |
| Low ON-Resistance (3.9 mmOhm typical at VGS=10V) | |
| DFN3*3 Package | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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