OTS80N10R 100V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 49.9nC (Typ.).
BVDSS=100V,ID=80A
RDS(on) : 0.007mOhm (Max) @VGS=10V
100% Avalanche Tested
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Description
The OTS80N10R is a 100V N-Channel MOSFET designed for high-performance power switching. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. With an 80A continuous drain current and low on-resistance, it is optimized for efficient power management and thermal stability in demanding applications.
OTS80N10R | |
| OTS80N10R 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.007 |
| Qg (nC) | 49.9 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 2604 |
| Coss Typ (pF) | 361.2 |
| Crss Typ (pF) | 6.5 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 49.9nC (Typ.). | |
| BVDSS=100V,ID=80A | |
| RDS(on) : 0.007mOhm (Max) @VGS=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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