OTS80N10R 100V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 49.9nC (Typ.).
BVDSS=100V,ID=80A
RDS(on) : 0.007mOhm (Max) @VGS=10V
100% Avalanche Tested
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Description
The OTS80N10R is a 100V N-Channel MOSFET designed for high-performance power switching. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. With an 80A continuous drain current and low on-resistance, it is optimized for efficient power management and thermal stability in demanding applications.
OTS80N10R |
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OTS80N10R 100V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
100 |
|
BVdss (V) |
100 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.007 |
|
Qg (nC) |
49.9 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
2604 |
|
Coss Typ (pF) |
361.2 |
|
Crss Typ (pF) |
6.5 |
|
Pd (W) |
25 |
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VRRM (V) |
100 |
|
TJ ( degC) |
25 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 49.9nC (Typ.). |
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|
BVDSS=100V,ID=80A |
|
|
RDS(on) : 0.007mOhm (Max) @VGS=10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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