650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
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Description
The OAN290N65CL1 is a 650V Gallium Nitride (GaN) power transistor in a TO-220 package, optimized for high efficiency and high switching speeds. It features an excellent figure of merit (FOM) with low switching and QRR losses, making it suitable for high-performance power electronics applications without the need for a free-wheeling diode.
OAN290N65CL1 | |
| 650V GaN Power Transistor | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 1500 |
| Grade | GaN |
| Package | TO-220 |
| RDS(ON) (mOhm) | 230 |
| Qg (nC) | 12 |
| ID @25 degC (A) | 13 |
| Ciss Typ (pF) | 490 |
| Coss Typ (pF) | 25 |
| Crss Typ (pF) | 4 |
| Pd (W) | 70 |
| VRRM (V) | 650 |
| TJ ( degC) | 150 |
Features | |
| Easy tOuse, compatible with standard gate drivers | |
| Excellent QG x RDS(on) figure of merit (FOM) | |
| Low QRR, nOfree-wheeling diode required | |
| Low switching loss | |
| RoHS compliant and Halogen-free | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
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