650V GaN Power Transistor
$0
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN290N65CL1 is a 650V Gallium Nitride (GaN) power transistor in a TO-220 package, optimized for high efficiency and high switching speeds. It features an excellent figure of merit (FOM) with low switching and QRR losses, making it suitable for high-performance power electronics applications without the need for a free-wheeling diode.
OAN290N65CL1 |
|
|
650V GaN Power Transistor |
|
Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
1500 |
|
Grade |
GaN |
|
Package |
TO-220 |
|
RDS(ON) (mOhm) |
230 |
|
Qg (nC) |
12 |
|
ID @25 degC (A) |
13 |
|
Ciss Typ (pF) |
490 |
|
Coss Typ (pF) |
25 |
|
Crss Typ (pF) |
4 |
|
Pd (W) |
70 |
|
VRRM (V) |
650 |
|
TJ ( degC) |
150 |
Features |
|
|
Easy tOuse, compatible with standard gate drivers |
|
|
Excellent QG x RDS(on) figure of merit (FOM) |
|
|
Low QRR, nOfree-wheeling diode required |
|
|
Low switching loss |
|
|
RoHS compliant and Halogen-free |
|
Applications |
|
|
High Frequency Power Supply, RF Applications, Fast Switching |
|
Reviews
There are no reviews yet.