- Description
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Description
Easy tOuse, compatible with standard gate drivers Excellent QG×RDS(on) figure of merit (FOM) Low QRR nOfree-wheeling diode required Low switching loss RoHS compliant and Halogen-free The OAN300N65C1 is a 650V GaN power transistor with low on resistance (240mOhm typ) and low gate charge. Ideal for high efficiency USB PD adapters and consumer electronics.
OAN300N65C1 |
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OAN300N65C1 650V GaN |
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Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
650 |
|
Grade |
GaN |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
300 |
|
ID @25 degC (A) |
300 |
|
VGS(th) Typ (V) |
4 |
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Pd (W) |
60 |
|
VGS(th) MIN (V) |
3 |
|
VGS(th) MAX (V) |
5 |
|
VRRM (V) |
650 |
|
TJ ( degC) |
150 |
Features |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
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