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Description
Easy tOuse, compatible with standard gate drivers Excellent QG×RDS(on) figure of merit (FOM) Low QRR nOfree-wheeling diode required Low switching loss RoHS compliant and Halogen-free The OAN300N65C1 is a 650V GaN power transistor with low on resistance (240mOhm typ) and low gate charge. Ideal for high efficiency USB PD adapters and consumer electronics.
OAN300N65C1 | |
| OAN300N65C1 650V GaN | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | GaN |
| Package | ABS |
| RDS(ON) (mOhm) | 300 |
| ID @25 degC (A) | 300 |
| VGS(th) Typ (V) | 4 |
| Pd (W) | 60 |
| VGS(th) MIN (V) | 3 |
| VGS(th) MAX (V) | 5 |
| VRRM (V) | 650 |
| TJ ( degC) | 150 |
Features | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
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