OAN320N70F 700V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN320N70F is a high-performance 700V GaN power transistor featuring an excellent figure of merit (FOM), low switching losses, and zero reverse recovery charge. It is designed for high-efficiency applications like power supplies, USB PD adapters, and motor drives, offering compatibility with standard gate drivers.
OAN320N70F | |
| OAN320N70F 700V GaN Power Transistor | |
Property | Value |
| Vrrm (V) | 700 |
| BVdss (V) | 1000 |
| Grade | GaN |
| RDS(ON) (mOhm) | 320 |
| Qg (nC) | 5.8 |
| ID @25 degC (A) | 5 |
| Ciss Typ (pF) | 304 |
| Coss Typ (pF) | 11 |
| Crss Typ (pF) | 1 |
| Pd (W) | 15 |
| VRRM (V) | 700 |
| TJ ( degC) | 25 |
Features | |
| Easy tOuse, compatible with standard gate drivers | |
| Excellent QG x RDS(on) figure of merit (FOM) | |
| Low QRR, nOfree-wheeling diode required | |
| Low switching loss | |
| RoHS compliant and Halogen-free | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
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