650V N-Channel MOSFET
650V, 30A
RDS(ON) = 180 mmOhm @ VGS = 10V
Designed for low on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance
- Description
- Reviews (0)
Description
This 650V N-Channel MOSFET is designed for low on-state resistance and high-frequency operation, featuring an ultra-low RDS(on) of 180 mmOhm at VGS = 10V and a fast reverse recovery body diode. It is optimized for applications such as SMPS, power adapters, LED lighting, and TV power supplies.
OCS65R180WM | |
| 650V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 180 |
| IF (A) | 400 |
| Pd (W) | 25 |
| VRRM (V) | 650 |
| TJ ( degC) | 25 |
Features | |
| 650V, 30A | |
| RDS(ON) = 180 mmOhm @ VGS = 10V | |
| Designed for low on-state resistance and high frequency | |
| Fast reverse recovery body diode | |
| Low RDS(ON) | |
| Ultra-low on-resistance | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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