650V N-Channel MOSFET
$0
650V, 30A
RDS(ON) = 180 mmOhm @ VGS = 10V
Designed for low on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance
- Description
- Reviews (0)
Description
This 650V N-Channel MOSFET is designed for low on-state resistance and high-frequency operation, featuring an ultra-low RDS(on) of 180 mmOhm at VGS = 10V and a fast reverse recovery body diode. It is optimized for applications such as SMPS, power adapters, LED lighting, and TV power supplies.
OCS65R180WM |
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650V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
650 |
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BVdss (V) |
650 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
180 |
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IF (A) |
400 |
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Pd (W) |
25 |
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VRRM (V) |
650 |
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TJ ( degC) |
25 |
Features |
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650V, 30A |
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RDS(ON) = 180 mmOhm @ VGS = 10V |
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Designed for low on-state resistance and high frequency |
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Fast reverse recovery body diode |
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Low RDS(ON) |
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Ultra-low on-resistance |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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