OCS65R190D SJMOS N-MOSFET 650V, 20A
$0
Super_Junction technology
Much lower Ron*A performance for On-state efficiency
Much lower FOM for fast switching efficiency
100% DVDS Tested
100% Avalanche Tested
RoHS compliant
Halogen-free
- Description
- Reviews (0)
Description
The OCS65R190D is a high-performance SJMOS N-MOSFET with a 650V drain-source voltage and 20A continuous drain current. It utilizes Super Junction technology tOachieve significantly lower Ron*A and optimized Figure of Merit (FOM), enhancing both on-state efficiency and fast switching performance in applications like LED lighting, solar inverters, and power supplies.
OCS65R190D |
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OCS65R190D SJMOS N-MOSFET 650V, 20A |
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Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
650 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
175 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
41 |
|
ID @25 degC (A) |
650 |
|
Ciss Typ (pF) |
1427 |
|
Coss Typ (pF) |
67 |
|
Crss Typ (pF) |
21 |
|
Pd (W) |
25 |
|
VRRM (V) |
650 |
|
TJ ( degC) |
42.5 |
Features |
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Super_Junction technology |
|
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Much lower Ron*A performance for On-state efficiency |
|
|
Much lower FOM for fast switching efficiency |
|
|
100% DVDS Tested |
|
|
100% Avalanche Tested |
|
|
RoHS compliant |
|
|
Halogen-free |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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