OCS65R190D SJMOS N-MOSFET 650V, 20A
Super_Junction technology
Much lower Ron*A performance for On-state efficiency
Much lower FOM for fast switching efficiency
100% DVDS Tested
100% Avalanche Tested
RoHS compliant
Halogen-free
- Description
- Reviews (0)
Description
The OCS65R190D is a high-performance SJMOS N-MOSFET with a 650V drain-source voltage and 20A continuous drain current. It utilizes Super Junction technology tOachieve significantly lower Ron*A and optimized Figure of Merit (FOM), enhancing both on-state efficiency and fast switching performance in applications like LED lighting, solar inverters, and power supplies.
OCS65R190D | |
| OCS65R190D SJMOS N-MOSFET 650V, 20A | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 175 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 41 |
| ID @25 degC (A) | 650 |
| Ciss Typ (pF) | 1427 |
| Coss Typ (pF) | 67 |
| Crss Typ (pF) | 21 |
| Pd (W) | 25 |
| VRRM (V) | 650 |
| TJ ( degC) | 42.5 |
Features | |
| Super_Junction technology | |
| Much lower Ron*A performance for On-state efficiency | |
| Much lower FOM for fast switching efficiency | |
| 100% DVDS Tested | |
| 100% Avalanche Tested | |
| RoHS compliant | |
| Halogen-free | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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