N-CHANNEL MOSFET
$0
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS170N085 is an N-Channel MOSFET designed for high-efficiency power conversion applications. It features exceptionally low on-resistance (Rdson) and gate charge, facilitating fast switching and reduced power loss. Suitable for isolated DC/DC converters in telecom and industrial sectors, as well as synchronous rectification in both DC/DC and AC/DC systems, the device is 100% avalanche tested and built with improved dv/dt capability for enhanced reliability.
OGS170N085 |
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N-CHANNEL MOSFET |
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Property |
Value |
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BVdss (V) |
85 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
3 |
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VTH @25 degC (V) |
0 |
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ID @25 degC (A) |
85 |
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Pd (W) |
25 |
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TJ ( degC) |
25 |
Features |
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Low gate charge |
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Low Rdson |
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Fast switching |
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100% avalanche tested |
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Improved dv/dt capability |
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RoHS product |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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