OGS175N10 N-MOSFET 100V, 2.8m©, 175A
Uses advanced SGT MOS technology
Extremely low on-resistance RDS(on)
Excellent QgxRDS(on) product (FOM)
Qualified according tOJEDEC criteria
100% Avalanche Tested
- Description
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Description
The OGS175N10 is an N-channel MOSFET that uses advanced SGT MOS technology. It features extremely low on-resistance and an excellent Figure of Merit (FOM), which is the product of gate charge and on-resistance. This device is qualified according tOJEDEC criteria and is 100% avalanche tested, making it suitable for motor control and drive, battery management, and uninterruptible power supplies (UPS).
OGS175N10 | |
| OGS175N10 N-MOSFET 100V, 2.8m©, 175A | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | -220 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 139 |
| IF (A) | 55 |
| ID @25 degC (A) | 100 |
| Ciss Typ (pF) | 9538 |
| Coss Typ (pF) | 1154 |
| Crss Typ (pF) | 36 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Uses advanced SGT MOS technology | |
| Extremely low on-resistance RDS(on) | |
| Excellent QgxRDS(on) product (FOM) | |
| Qualified according tOJEDEC criteria | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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