OGS175N10 N-MOSFET 100V, 2.8m©, 175A
$0
Uses advanced SGT MOS technology
Extremely low on-resistance RDS(on)
Excellent QgxRDS(on) product (FOM)
Qualified according tOJEDEC criteria
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OGS175N10 is an N-channel MOSFET that uses advanced SGT MOS technology. It features extremely low on-resistance and an excellent Figure of Merit (FOM), which is the product of gate charge and on-resistance. This device is qualified according tOJEDEC criteria and is 100% avalanche tested, making it suitable for motor control and drive, battery management, and uninterruptible power supplies (UPS).
OGS175N10 |
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OGS175N10 N-MOSFET 100V, 2.8m©, 175A |
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Property |
Value |
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Vrrm (V) |
100 |
|
BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
TO-220 |
|
RDS(ON) (mOhm) |
-220 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
139 |
|
IF (A) |
55 |
|
ID @25 degC (A) |
100 |
|
Ciss Typ (pF) |
9538 |
|
Coss Typ (pF) |
1154 |
|
Crss Typ (pF) |
36 |
|
Pd (W) |
25 |
|
VRRM (V) |
100 |
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TJ ( degC) |
25 |
Features |
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Uses advanced SGT MOS technology |
|
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Extremely low on-resistance RDS(on) |
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|
Excellent QgxRDS(on) product (FOM) |
|
|
Qualified according tOJEDEC criteria |
|
|
100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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