OGS175N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Load Switch Application
PWM Application
Power Management
- Description
- Reviews (0)
Description
The OGS175N10F is a 100V N-Channel MOSFET featuring advanced split gate trench technology. It offers excellent RDS(ON) and low gate charge, making it highly efficient for load switch, PWM, and power management applications. The device is 100% UIS and °”Vds tested tOensure reliability.
OGS175N10F |
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OGS175N10F 100V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
100 |
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BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
3 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
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IF (A) |
40 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
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Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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VRRM (V) |
100 |
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TJ ( degC) |
25 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Load Switch Application |
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PWM Application |
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Power Management |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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