OGS180N03 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS180N03 is an N-channel MOSFET designed for isolated DC/DC converters in telecom and industrial applications, and synchronous rectification in DC/DC and AC/DC power conversion. It features low gate charge, low on-state resistance (Rdson), and fast switching capabilities. The device is 100% avalanche tested and provides improved dv/dt capability, ensuring robust performance in demanding power management systems.
OGS180N03 | |
| OGS180N03 N-CHANNEL MOSFET | |
Property | Value |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 1.4 |
| VTH @25 degC (V) | 0 |
| ID @25 degC (A) | 30 |
| Pd (W) | 25 |
| TJ ( degC) | 0.02 |
Features | |
| Low gate charge | |
| Low Rdson | |
| Fast switching | |
| 100% avalanche tested | |
| Improved dv/dt capability | |
| RoHS product | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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