OAN125N65D 650V GaN Power Transistor
$0
Easy tOuse, compatible with standard gate drivers
Excellent Qg x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN125N65D is a 650V Gallium Nitride (GaN) power transistor designed for high-efficiency power conversion. It features compatibility with standard gate drivers, low switching losses, and an excellent figure of merit (FOM), making it ideal for high-efficiency power supplies, USB PD adapters, and other consumer electronics.
OAN125N65D |
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OAN125N65D 650V GaN Power Transistor |
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Property |
Value |
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Vrrm (V) |
650 |
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BVdss (V) |
1000 |
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Grade |
GaN |
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RDS(ON) (mOhm) |
125 |
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Qg (nC) |
16 |
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ID @25 degC (A) |
11 |
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Ciss Typ (pF) |
. |
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Coss Typ (pF) |
. |
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Pd (W) |
28 |
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VRRM (V) |
650 |
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TJ ( degC) |
150 |
Features |
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Easy tOuse, compatible with standard gate drivers |
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Excellent Qg x RDS(on) figure of merit (FOM) |
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Low QRR, nOfree-wheeling diode required |
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Low switching loss |
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RoHS compliant and Halogen-free |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
There are no reviews yet.