OAN125N65D 650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent Qg x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
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Description
The OAN125N65D is a 650V Gallium Nitride (GaN) power transistor designed for high-efficiency power conversion. It features compatibility with standard gate drivers, low switching losses, and an excellent figure of merit (FOM), making it ideal for high-efficiency power supplies, USB PD adapters, and other consumer electronics.
OAN125N65D | |
| OAN125N65D 650V GaN Power Transistor | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 1000 |
| Grade | GaN |
| RDS(ON) (mOhm) | 125 |
| Qg (nC) | 16 |
| ID @25 degC (A) | 11 |
| Ciss Typ (pF) | . |
| Coss Typ (pF) | . |
| Pd (W) | 28 |
| VRRM (V) | 650 |
| TJ ( degC) | 150 |
Features | |
| Easy tOuse, compatible with standard gate drivers | |
| Excellent Qg x RDS(on) figure of merit (FOM) | |
| Low QRR, nOfree-wheeling diode required | |
| Low switching loss | |
| RoHS compliant and Halogen-free | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
Reviews
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