OAN125N65K 650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN125N65K is a 650V Gallium Nitride (GaN) Power Transistor in a DFN8*8 package, optimized for high efficiency and easy design-in. It features a cascode device structure, making it compatible with standard gate drivers while offering excellent switching performance with low losses and no requirement for a free-wheeling diode.
OAN125N65K | |
| OAN125N65K 650V GaN Power Transistor | |
Property | Value |
| Vrrm (V) | 650 |
| BVdss (V) | 650 |
| Grade | GaN |
| Package | DFN8*8 |
| RDS(ON) (mOhm) | 125 |
| Qg (nC) | 16 |
| ID @25 degC (A) | 12.6 |
| Pd (W) | 38 |
| Qr (nC) | 36 |
| VRRM (V) | 650 |
| TJ ( degC) | 150 |
Features | |
| Easy tOuse, compatible with standard gate drivers | |
| Excellent QG x RDS(on) figure of merit (FOM) | |
| Low QRR, nOfree-wheeling diode required | |
| Low switching loss | |
| RoHS compliant and Halogen-free | |
Applications | |
| High Frequency Power Supply, RF Applications, Fast Switching | |
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