OAN125N65K 650V GaN Power Transistor
$0
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free
- Description
- Reviews (0)
Description
The OAN125N65K is a 650V Gallium Nitride (GaN) Power Transistor in a DFN8*8 package, optimized for high efficiency and easy design-in. It features a cascode device structure, making it compatible with standard gate drivers while offering excellent switching performance with low losses and no requirement for a free-wheeling diode.
OAN125N65K |
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OAN125N65K 650V GaN Power Transistor |
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Property |
Value |
|
Vrrm (V) |
650 |
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BVdss (V) |
650 |
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Grade |
GaN |
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Package |
DFN8*8 |
|
RDS(ON) (mOhm) |
125 |
|
Qg (nC) |
16 |
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ID @25 degC (A) |
12.6 |
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Pd (W) |
38 |
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Qr (nC) |
36 |
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VRRM (V) |
650 |
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TJ ( degC) |
150 |
Features |
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Easy tOuse, compatible with standard gate drivers |
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Excellent QG x RDS(on) figure of merit (FOM) |
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Low QRR, nOfree-wheeling diode required |
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Low switching loss |
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RoHS compliant and Halogen-free |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
There are no reviews yet.