- Description
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Description
Easy tOuse, compatible with standard gate drivers Excellent QG×RDS(on) figure of merit (FOM) Low QRR nOfree-wheeling diode required Low switching loss RoHS compliant and Halogen-free The OAN125N65R is a 650V N-channel MOSFET featuring very low on resistance (125mOhm typ) and low gate charge (16nC). It is optimized for high efficiency power supplies and automotive applications, eliminating the need for an external freewheeling diode.
OAN125N65R |
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OAN125N65R 650V |
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Property |
Value |
|
Vrrm (V) |
650 |
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BVdss (V) |
650 |
|
Grade |
GaN |
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Package |
ABS |
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RDS(ON) (mOhm) |
160 |
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ID @25 degC (A) |
65 |
|
VGS(th) Typ (V) |
4 |
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Pd (W) |
36 |
|
VGS(th) MIN (V) |
3 |
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VGS(th) MAX (V) |
5 |
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VRRM (V) |
650 |
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TJ ( degC) |
150 |
Features |
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Applications |
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High Frequency Power Supply, RF Applications, Fast Switching |
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Reviews
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