OCS65G120L 650V 120mmOhm GaN Power
Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
NOreverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according tOJEDEC Standards enhancement mode Gallium Nitride (GaN) power
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Description
transistor with a typical on-resistance of 120mmOhm. It features ultra-high switching frequency, zero reverse-recovery charge, and low gate and output charge, making it ideal for high-density and high-efficiency power conversion applications such as AC-DC converters, DC-DC converters, and • RDS(ON) = 120mmOhm (Typ) totem pole PFC.
OCS65G120L |
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OCS65G120L 650V 120mmOhm GaN Power |
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Property |
Value |
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Vrrm (V) |
650 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
120 |
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Qg (nC) |
400 |
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ID @25 degC (A) |
6 |
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Ciss Typ (pF) |
400 |
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Coss Typ (pF) |
400 |
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Crss Typ (pF) |
400 |
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Pd (W) |
25 |
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VRRM (V) |
650 |
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TJ ( degC) |
-55 |
Features |
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Enhancement mode transistor-Normally off power switch |
|
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Ultra high switching frequency |
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NOreverse-recovery charge |
|
|
Low gate charge, low output charge |
|
|
Qualified for industrial applications according tOJEDEC Standards enhancement mode Gallium Nitride (GaN) power |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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