OCS65G120L 650V 120mmOhm GaN Power
Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
NOreverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according tOJEDEC Standards enhancement mode Gallium Nitride (GaN) power
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Description
transistor with a typical on-resistance of 120mmOhm. It features ultra-high switching frequency, zero reverse-recovery charge, and low gate and output charge, making it ideal for high-density and high-efficiency power conversion applications such as AC-DC converters, DC-DC converters, and • RDS(ON) = 120mmOhm (Typ) totem pole PFC.
OCS65G120L | |
| OCS65G120L 650V 120mmOhm GaN Power | |
Property | Value |
| Vrrm (V) | 650 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 120 |
| Qg (nC) | 400 |
| ID @25 degC (A) | 6 |
| Ciss Typ (pF) | 400 |
| Coss Typ (pF) | 400 |
| Crss Typ (pF) | 400 |
| Pd (W) | 25 |
| VRRM (V) | 650 |
| TJ ( degC) | -55 |
Features | |
| Enhancement mode transistor-Normally off power switch | |
| Ultra high switching frequency | |
| NOreverse-recovery charge | |
| Low gate charge, low output charge | |
| Qualified for industrial applications according tOJEDEC Standards enhancement mode Gallium Nitride (GaN) power | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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