OCS65G150L 650V 150mmOhm GaN HEMT
Easy tOdrive-compatible with standard gate drivers
Low conduction and switching losses
RoHS compliant and Halogen-free
Increased efficiency through fast switching
Increased power density
Reduced system size and weight
Fast charger
Renewable energy
Telecom and data-com
ServOmotors
Industrial
Automotive
- Description
- Reviews (0)
Description
The OCS65G150L Series 650V, 150m© gallium nitride (GaN) FETs are normally-on devices. GaNFETs offer better efficiency through lower gate charge, faster switching speeds, and zeroreverse recovery charge, delivering significant advantages over traditional silicon (Si) devices.
OCS65G150L |
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OCS65G150L 650V 150mmOhm GaN HEMT |
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Property |
Value |
|
Vrrm (V) |
650 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
150 |
|
Qg (nC) |
12 |
|
ID @25 degC (A) |
150 |
|
Ciss Typ (pF) |
69 |
|
Coss Typ (pF) |
24 |
|
Crss Typ (pF) |
7 |
|
Pd (W) |
25 |
|
VRRM (V) |
650 |
|
TJ ( degC) |
25 |
Features |
|
|
Easy tOdrive-compatible with standard gate drivers |
|
|
Low conduction and switching losses |
|
|
RoHS compliant and Halogen-free |
|
|
Increased efficiency through fast switching |
|
|
Increased power density |
|
|
Reduced system size and weight |
|
|
Fast charger |
|
|
Renewable energy |
|
|
Telecom and data-com |
|
|
ServOmotors |
|
|
Industrial |
|
|
Automotive |
|
Applications |
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|
Power Management, Switching Circuits, Motor Drives |
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Reviews
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