OCS65R028W N-channel 650V, 100A,
$0
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 172nC)
100% UIS tested
RoHS compliant OCS65R028W is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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Description
OCS65R028W is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
OCS65R028W |
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OCS65R028W N-channel 650V, 100A, |
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Property |
Value |
|
Vrrm (V) |
650 |
|
BVdss (V) |
650 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
3 |
|
Qg (nC) |
172 |
|
IF (A) |
0 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
100 |
|
Coss Typ (pF) |
100 |
|
Crss Typ (pF) |
100 |
|
Pd (W) |
735 |
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VRRM (V) |
650 |
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TJ ( degC) |
650 |
Features |
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Ultra low RDS(on) |
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Ultra low gate charge (typ. Qg = 172nC) |
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100% UIS tested |
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RoHS compliant OCS65R028W is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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